DEPLETION ENHANCEMENT MOSFETs By reverse biasing the gate of an N-CHANNEL JFET with respect to its Source, the width of depletion region increases considerably. This results the reduction of channel thickness, which further increases its resistance. And as a net result the Drain Current Id Reduces. If the polarity gate voltage is reversed so as to apply a positive bias to the gate with respect to Source, the P-N Junctions between the gate and the channel would then be Forward biased. Since a Forward bias Reduces the width of Depletion region , the thickness of channel would increase with a corresponding decrease in channel resistance. As a result, Drain Current Id would increase beyond the JFETs Idss value. The normal operation of a JFETs is in its Depletion mode. However it is Possible to increase or enhance the conductivity of JFET Channel. This increases the TRANSCONDUCTANCE gm. As the name suggests, DEPLETION ENHANCEMENT MOSFET (DE-MOSFET) was developed to be used in either o...